Production HVPE technology for GaN-based electronics

"TDI proposes to develop novel multi-wafer HVPE technology for mass production of GaN(and AlGaN) epitaxial materials. The HVPE technique is a well-established, costeffective method to grow GaN (and AlGaN) epitaxial layers on sapphire and siliconcarbide substrates. Recent advances have proven HVPE to be a reliable process forfabricating high-quality GaN-based device structures. The wide range of growth ratepossible with this growth method allows one to produce both multi-layer devicestructures with submicron layers and thick layers suitable for fabrication offree-standing wafers. The goal of this Phase I project is to prove the concept anddemonstrate multi-wafer HVPE process. Phase II will be focused on the developmentof HVPE technology for volume production of GaN-based epi wafers. Development ofmulti-wafer production process for GaN materials will benefit BMDO programs bylowering GaN material cost and speeding up device and component development. Novel multi wafer technology will drastically reduce cost and increase availabilityof GaN and AlN epitaxial wafers. GaN and AlN epitaxial wafers have tremendouspotential for the fabrication of electronic and optoelectronic devices based ongroup III nitrides (GaN, AlN, InN and their alloys) for military and industrialapplications. Commercialization of high quality low cost GaN (AlGaN) epitaxialwafers will benefit device and electronic component development and production fornext gene