NUMERICAL SIMULATION OF MAGNETIC LEC GROWTH OF SEMI-INSULATING GAAS

DISLOCATIONS IN SEMI-INSULATING GALLIUM ARSENIDE (GAAS) CRYSTALS ARE KNOWN TO EXERT A CONSIDERABLE INFLUENCE ON THE PERFORMANCE OF ELECTRONIC DEVICES. THE CRYSTAL QUALITY IN TURN DEPENDS ON THE MELTCRYSTAL INTERFACE CHARACTERISTICS, E.G., TEMPERATURE FLUCTUATION DURING GROWTH. FOR A LONG TIME IT HAS BEEN KNOWN THAT AN EXTERNALLY APPLIED MAGNETIC FIELD CAN MODIFY THE FLUID DYNAMICS OF A CONDUCTING LIQUID. PRESENTLY, SCIENTIFIC RESEARCH ASSOCIATES, INC. (SRA) HAS SUCCESSFULLY DEVELOPED AN EFFICIENT NUMERICAL SCHEME IN CONJUNCTION WITH AN INTERFACE TRACKING ALGORITHM FOR SIMULATION OF CZOCHRALSKI (CZ) GROWTH. IT IS THE INTENT OF THE PROPOSED PROGRAM TO EXTEND SRA'S EXISTING TECHNIQUE TO MAGNETIC LIQUID ENCAPSULATION CZOCHRALSKI GROWTH (MLEC) TO PREDICT INTERFACIAL MELT CHARACTERISTICS. THE ADVANTAGE OF USING THE MLEC METHOD IS THAT THE INHOMOGENIETY OF THE CRYSTAL QUALITY IS CONTROLLABLE. THE PROPOSED PHASE I PROGRAM IS A FEASIBILITY STUDY FOR THE DEVELOPMENT OF PREDICTIVE CAPABILITIES OF CRYSTAL/MELT CHARACTERISTICS. SEMI-INSULATING GAAS WILL BE USED TO DEMONSTRATE THE DEVELOPMENT. A SUCCESSFUL PROGRAM WOULD PROVIDE AN IMPORTANT CONTRIBUTION TO A BETTER UNDERSTANDING OF THE GROWN CRYSTAL INTERFACE.