High-Density Optical-Readout Nonvolatile RAMS

This proposal addresses the fabrication of a novel high-density Optical-readout Nonvolatile Ferroelectric Random Access memories (ONF-RAMs). The optical readout mechanism is very robust and has a fast access times of sub-nanoseconds. The proposed device is based on a recently discovered ferroelectric-semiconductor interface phenomenon, at Clemson University, which enables ferroelectric thin film to perform nonvolatile binary optical switching. The device is inherently non-destructive, fast and low in energy consumption. Moreover, the proposed simple device structures are particularly suitable for scale up, therefore very large storage capacity can be realized from this technology. This innovative data storage technology offers the potential of simultaneously overcoming all the limitations which present in the current data storage technologies. ONF-RAMs may be a solution to the quest for nonvolatile random access memory (RAM) devices of even higher density, higher read/write rate and non-destructive readout. In this Phase I program,, NZ Applied Technologies,, in collaboration with Prof. G. Haertling of Clemson University will investigate the feasibility of developing this technology by demonstrating a preliminary prototype 64bits memory via an innovative plasma- enhanced chemical vapor deposition (PE-CVD). PE-CVD may become the best choice to produce ONF-RAMS.