ATOMIC LAYER EPITAXY OF BORON NITRIDE

WE PROPOSE A PHASE I RESEARCH PROGRAM AIMED AT DEPOSITING SINGLE CRYSTAL BN FILMS OVER SAPPHIRE AND SILICON CARBIDE SUBSTRATES. OUR PLAN IS TO EMPLOY A UNIQUE PHOTO-ASSISTED SWITCHED ATOMIC LAYER EPITAXY PROCESS. THIS WE FEEL WILL REDUCE THE SINGLE CRYSTAL EPITAXY TEMPERATURE VALUES CLOSE TO 1400C. WE ALSO PROPOSE TO USE A UNIQUE MULTILAYER BUFFERING PROCEDURE TO DECREASE THE INTERFACE DEFECTS RESULTING FROM THE LATTICE MISMATCH BETWEEN THE SUBSTRATE AND THE BN FILM. WE FEEL OUR INNOVATIONS WILL RESULT IN GOOD OPTICAL QUALITY SINGLE CRYSTAL BN FILM. SUBSEQUENTLY WE WILL ALSO USE THE ATOMIC LAYER EPITAXY PROCESS TO N- AND P- TYPE DOPE THE BN LAYERS.