SBIR/STTR Research Award

Complementary GaAs HBT Technology for Very High Frequency IC's Using Selective Area Regrowth by Molecula

Award identifier 839a78533ae858a4be772da2cd58d1a3c8eb39965a1be996a84f0a63ed19b62aAwarding agency Department of Defense · Air Force

Award amount

$99,000

Program and phase

SBIR · Phase I

Award year

1997

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
OVATION INDUSTRIES, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

The development of a two step materials growth process for the low cost production of AlGaAs / GaAs complementary HBT epiwafers is proposed. A new high stability source for carbon doping with CBr4 will be demonstrated and used to grow the p-type layers in both Npn and Pnp device structures that are monolithically integrated on the same semi-insulting substrate.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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