Growth of Large Diameter Silicon Carbide Boules

Absence of low defect density large diameter (~100 mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC-based devices. Hence, the development of a process to produce large diameter bulk SiC boules with low defectdensity offers a significant impetus for the widespread commercialization of SiC-based devices. An approach that will simultaneously increase wafer diameter and decrease defect density is expected to result in SiC-based devices that are larger in diameterand devices with improved characteristics, performance, and yield. In the Phase I program, the feasibility of growing 75 mm diameter 4H-SiC boules with significant reduction in mechanical stress due to boule diameter expansion from smaller diameter seedswas convincingly demonstrated. The objective of the proposed Phase II program is to take the Phase I demonstration of this new approach