Advanced Low-k Dielectrics by the Sol-Gel Process

In this proposal, we plan to synthesize a novel, new, UV-curable and fluorinated polymer using fluoronation and sol-gel process. This polymer has been proven to be a good replacement for spin-on glass (SOG). This polymer can be converted to a highly porous organic/inorganic composite at relatively low process temperature by controlling heat treatment temperatures, atmospheres and the sequence. This highly porous Quorinated organic/inorganic composite can be expected to have much lower dielectric constant. By using this family of polymers with different chemical composition to create more excess carbon and organics for burn-off, more than SC% porosity with extremely low dielectric constant (< 2 ) can be expected. Due to the organic/inorganic nature of this composite, excellent mechanical strength and high temperature stability can be expected even for that with more than 50% porosity. Conventional or advance lithography (such as electrons ions, X-ray) can be used to pattern this polymer films. No photoresists and related chemicals is needed, and no complicate etching process either. The washout polymer solutions can be recycled for further application. Therefore, this sol-gel polymer process of highly porous, fluorinated organic/inorganic composite films for low-k IMD applications will not only be with excellent material performance, ultra-low-cost, simple, high throughput, but also environmentally benign. This low-k composite films can be integrated into many microelectronic devices. This sol-gel process for direct-patterning lo v-k IMD will minimize or eliminate many existing microelectronic process. The chemicals for microelectronic processing and the waste that produced from these processes can also be minimized.