SBIR Phase I: Advanced Polymer resists for Extreme Ultraviolet (EUV) Nanolithography

This Small Business Innovation Research (SBIR) project proposes to develop high photospeed, low line edge roughness, and low outgassing photoresist for extreme ultraviolet (EUV) lithography. Although EUV lithography at 13.5 nm wavelength has emerged as a promising candidate to meet the resolution requirements of the microelectronic industry roadmap, yet the development of novel photoresist materials with all of the required imaging properties is still challenging and is one of the major subjects of current nanolithography research. The critical requirements for EUV lithographic photoresist include high photospeed, high resolution, and low line edge roughness. The design of novel resist materials that can achieve all three characteristics is the key for the continued success of high resolution patterning in integrated circuit manufacturing.