OPTICAL CHARACTERIZATION TECHNIQUES FOR SOI MATERIAL

PRESENT TECHNIQUES OF EXAMING RECRYSTALLIZED SILICON, INCLUDING SOI MATERIAL, INCLUDE A WET (ACID) ETCH AND EXAMINATION WITH AN OPTICAL MICROSCOPE, X-RAY DIFFRACTION, SEM OR TEM MICROSCOPES. THESE TECHNIQUES ARE SLOW, AND USUALLY THE SAMPLE IS DESTROYED. SANDIA SYSTEMS PROPOSES INVESTIGATING ANGLE-RESOLVED LIGHT SCATTER TECHNIQUES AS A METHOD TO EXAMINE RECRYSTALLIZED SILICON AS WELL AS OTHER MICROELECTRONICS MATERIALS. THE TECHNIQUE WOULD BE NONPERTURBING, COULD BE APPLIED IN SITU, WOULD BE FAST, AND COULD BE ADAPTED FOR AUTOMATION.