Tunneling Barrier Engineering: High Speed Diode Optimization for Next Generation Focal Plane Arrays

"ITN Energy Systems, Inc. proposes to develop its direct conversion device (DCD) consisting of a high speed diode coupled to the feedpoints of a microantenna, to address the BMDOs need for next generation IR focal plane arrays and sensor suites. ITNbelieves that by replacing existing detector technologies (bolometers and photodiodes) with its DCD, we can achieve greater sensitivity, greater bandwidth, and reduced cost. The key to the antenna based detector is the high-speed diode monolithicallyintegrated into the antenna array. The commercialization of this exciting technology is limited by unifor and reliable fabrication of the high speed tunneling diode. ITN proposes to use advanced processing techniques to create an engineered diode barrierwith improved uniformity and reproducibility and increased stability in performance. ITN's antenna based approach to high frequency detection (>THz) provides a versatile approach to sensing/imaging applications from the RF to Optical portion of theelectromagnetic spectrum. Using an advanced high frequency diode, ITN's technology provides superior bandwidth, increased sensitivity, target tracking, and decreased cost, compared to other state-of-the-art detectors (e.g. bolometers, photodiodes). Anatural application of ITN's detector technology is uncooled IR detection where ITN's technology will serve as the detector in a focal plane array. Current application are both government and commercial including surveillance, night vision, mobiletargeting, and direction finding."