Electronically Tunable Semiconductor Lasers for Wavelength Division Multiplexed Communications

The objective of this program is to develop a frequency-tunable, quantum well vertical cavity, semiconductor laser in the 1.3- or 1.5-micron wavelength region for applications in wavelength division multiplexed digital fiber optical communications systems. This scheme has the potential for a significant improvement in performance over other schemes such as thermally tuned DFB diode lasers by providing a circularly symmetric beam, high optical power and fast electronic tuning capability over a broad range (100 nm). This technique is also applicable to other wavelengths, including the 2-micron eye-safe region for use in the battlefield environment.