FLOAT ZONE SILICON SHEET GROWTH

RESEARCH ON A NOVEL PROCESSING TECHNOLOGY TO PRODUCE SHEET MATERIALS FROM BULK SOLIDS IS PROPOSED. THE PRINCIPAL OBJECTIVE IS TO DEVELOP A MEANS TO PRODUCE HIGH QUALITY, LOWCOST SILICON RIBBON. THIS NEW TECHNOLOGY WHEN DEVELOPED WILL REDUCE THE COST OF SILICON WAFER PRODUCTION AND RESPONDTO THE NATIONAL NEED FOR INCREASED ON SHORE MANUFACTURING PRODUCTIVITY IN THE ELECTRONICS INDUSTRY. CURRENT SILICON WAFER PRODUCTION FROM CZOCHRALSKI GROWN CRYSTALS WASTES, THROUGH SAWING, LAPPING AND POLISHING OPERATIONS, UP TO 70 PERCENT OF THE ASGROWN CRYSTAL WHICH REPRESENTS A BILLION DOLLAR LOSS WORLD WIDE. SUCCESS OF THE NEW PROCESS WILL PRODUCE SINGLE CRYSTAL SILICON RIBBONS OF SEMICONDUCTOR QUALITY WITH A THREE-FOLD REDUCTION IN COST AND NO MORE THANA 10 PERCENT WASTE OF CRYSTAL MATERIAL.