Bulk Growth of Gallium Nitride Single Crystal Boules

The primary goal of Phase I will be to demonstrate the feasibility of growing high quality 5-mm thick boules of GaN single crystal using the physical vapor transport method. Cermet will employ a novel, proprietary technique to enable the production of agallium-containing vapor. The vapor will then be crystallized on a seed in a nitrogen-containing atmosphere in the form of GaN boules. Crystals will be characterized using x-ray diffraction, electron microscopy, and GDMS. This technique will provideBMDO with a high quality source of single crystal GaN. This Technology will provide a source for GaN single crystals, which will be used in the fabrication of nitride laser diodes, high power nitride devices, nitride blue and white light emitting diodes,and nitride photodetectors.