SBIR/STTR Research Award
All Dry Processing of Amorphous Silicon Photoresists
Award amount
$600,000Program and phase
SBIR · Phase IIAward year
1996Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- MATERIALS RESEARCH GROUP, INC.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
An inorganic photoresist system involving only dry processing has many potential uses in microelectronic fabrication. Reduced wafer contamination and simpler waste disposal requirements will provide a strong driving force for replacing existing wet photolithographic processes with the new system. At the completion of this project, a new inorganic resist system utilizing hydrogenated amorphous silicon will be available to replace many of the wet chemical patterning steps used in current microelectronics, printed circuit board, and flat panel display fabrication. The system uses only silicon and hydrogen, so there is no contamination of silicon wafers and only dry plasma processing is used for deposition and removal of the films. Patterning of the amorphous silicon through UV enhanced oxidation will allow the use of existing exposure tools, or exposure under a partial pressure of oxygen would allow an all vacuum process. The Phase I work will provide proof of concept for the use of amorphous silicon as a dry photoresist. Additionally, detailed design and cost estimates will be generated for a prototype PECVD module optimized for the process developed.
Technology keywords
Not reported