SBIR/STTR Research Award

All Dry Processing of Amorphous Silicon Photoresists

Award identifier fd70f30387e9c9ce3f0edd70a1ce1938f319bd126abf4990103aef2370c239b9Awarding agency Department of Defense · Army

Award amount

$600,000

Program and phase

SBIR · Phase II

Award year

1996

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Award details

Awarding agency
Department of Defense
Branch
Army
Recipient company
MATERIALS RESEARCH GROUP, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

An inorganic photoresist system involving only dry processing has many potential uses in microelectronic fabrication. Reduced wafer contamination and simpler waste disposal requirements will provide a strong driving force for replacing existing wet photolithographic processes with the new system. At the completion of this project, a new inorganic resist system utilizing hydrogenated amorphous silicon will be available to replace many of the wet chemical patterning steps used in current microelectronics, printed circuit board, and flat panel display fabrication. The system uses only silicon and hydrogen, so there is no contamination of silicon wafers and only dry plasma processing is used for deposition and removal of the films. Patterning of the amorphous silicon through UV enhanced oxidation will allow the use of existing exposure tools, or exposure under a partial pressure of oxygen would allow an all vacuum process. The Phase I work will provide proof of concept for the use of amorphous silicon as a dry photoresist. Additionally, detailed design and cost estimates will be generated for a prototype PECVD module optimized for the process developed.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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