SBIR/STTR Research Award

Ferroelectric Capacitors for Pulse Power Electronics

Award identifier a6aca86686e8db771af66ebaeaefe7bc7c4af3c06933e8baa042d6800dd85af2Awarding agency Department of Defense · Missile Defense Agency

Award amount

$753,020

Program and phase

SBIR · Phase II

Award year

1997

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Advanced Technologies/Laboratories Intl
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

HIGH-DENSITY ENERGY STORAGE AND FAST DISCHARGE WILL BE CRITICAL IN A VARIETY OF HIGH POWER AEROSPACE APPLICATIONS. CAPACITORS ARE IDEAL FOR THESE PURPOSES, AS WELL AS FOR POWER CONDITIONING AND FILTERING. UNFORTUNATELY, BULK POWDER-BASED DIELECTRICS USED IN CAPACITORS HAVE SEVERE LIMITATIONS, ESPECIALLY THE HIGH NUMBER OF SHORT-INDUCING DEFECTS CAUSED BY POOR CONTROL OF MATERIAL PROPERTIES IN CERAMIC FABRICATION PROCESSES. WE PROPOSE TO LEAPFROG CURRENT CAPACITOR TECHNOLOGY THROUGH THE CONTROLLED GROWTH OF HIGH DIELECTRIC CONSTANT AND HIGH DIELECTRIC STRENGTH THIN FILMS ON MECHANICALLY STRONG SUBSTRATES. HIGH RATE MOCVD IS PROPOSED AS A GROWTH METHOD, SIMILAR TO WHAT IS CURRENTLY USED IN INDUSTRY TO MAKE CM THICK ZnSe IR WINDOWS. IN PHASE I, METHODOLOGY WILL BE DEVELOPED TO DEPOSIT THICK Ba(x)Sr(1-x)TiO(3) FILMS ON CONDUCTING OXIDE ELECTRIDES FOR USE IN HIGH ENERGY DENSITY CAPACITORS. IN PARTICULAR THICK FILMS OF Ba(0.5)Sr(0.5)TiO(3), WHICH HAS DEMONSTRATED DIELECTRIC CONSTANTS GREATER THAN 800 WITH BREAKDOWN VOLTAGES OF 1.5-2 MV/cm (45-60 kV/MIL), WILL BE GROWN. IN PHASE II, THE MOCVD DEPOSITION PROCESS WILL BE SCALED UP TO COMMERCIAL VOLUMES, MULTILAYERS AND ELECTRODING EXAMINED, AND PARTNERSHIPS ESTABLISHED TO VALIDATE THIS TECHNOLOGY IN THE MARKETPLACE THROUGH THE CONSTRUCTION OF PROTOTYPE HIGH ENERGY DENSITY CAPACITORS.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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