Improved SiC Materials for High Power Electronics

Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts to be realized with acceptable manufacturing yields. [2,3] We will demonstrate the feasibility of a novelSiC device using our proprietary method to render micropipes electrically inactive and also to use the method of Cole, et. al. [4] to fabricate Ohmic contacts which will attain reproducible low specific contact resistance.REFERENCES:1. Chow, T., Mat. Res. Soc. Symp., V622, 2000.2. Tsvetkov, V. ,et. al., Silicon Carbide, III-Nitrides, and Related Materials, Materials Science Forum, 264-268, Trans Tech, pp 3-8,1998.3. Neudeck, P., et. al., J., Mat. Res. Soc. Symp., v622, 2000.4. Cole, M., et. al., Mat. Res. Soc. Symp., V622, 2000.With Phoexix Innovation's ability to create useful devices on current material we believe that there are numerous commercial and military markets for this technology.