SBIR/STTR Research Award

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Award identifier 0293bad576dec09e06031c19dedbdeb6960bf2ee1c698f66dadd286aa2c40e01Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$98,949

Program and phase

SBIR · Phase I

Award year

1999

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
BELTRAN, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Not Available Capacitors are formed by depositing a dielectric between two conductive plates. While fabrication techniques achieve outstanding levels of repeatabillity and consistency, many applications are difficult to fullfill with current manufacturing methods. A solid state resistor film may be trimmed to a certain value after deposition by the selective ablation of the resisting medium by a laser beam. A capacitor, however, is formed by the entrapment of a dielectric material between the metal conductors. We propose the development of a capacitor using a dielectric material that has a dielectric constant which may be altered by exposure to ultraviolet radiation after deposition to provide a basis for trimmable or tunable capacitive devices. This will involve the use of organosilicon materials plasma polymerized at room temperature and a photo oxidative polymer which when exposed to UV and oxygen will pattern and is alterable with UV dosage. As the literature shows no indication of work in this area discussions with users are needed to develop and identify specific areas of application.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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