Epitaxial Growth Of High Bandgap III-V Semiconductor

SPECTRA DIODE LABORATORIES (SDL) PROPOSESS TO INVESTIGATE HIGH BANDGAP GaN RELATED ALLOYS FOR VISIBLE LASER DIODES AND HIGH TEMPERATURE ELECTRONIC DEVICES. THE PROPOSED DEVELOPMENT OF THE HIGH BANDGAP MATERIAL WILL RESULT IN LASER DIODES SPANNING ALL RANGE OF THE VISIBLE SPECTRUM ANF HIGH TEMPERATURE ELECTRONIC DEVICES THAT CAN OPERATE AT GREATER 200 DEGREE C. THE GOAL OF PHASE I IS EPITAXIAL GROWTH AND CHARACTERIZATION SELECTED ALLOYS. IN PHASE II, SDL WILL FURTHER REFINE AND DEVELOP THE PROCESSES DEMONSTRATED IN PHASE I TO ACHIEVE CW VISIBLE LASER DIODES. THE ADVANCEMENT OF THE GaN BASED SEMICONDUCTORS WILL RESULT IN BLUE LASER SOURCES AND HIGH TEMPERATURE EELECTRONIC DEVICES THAT WILL GREATLY IMPACT BOTH COMMERCIAL AND MILITARY APPLICATIONS INCLUDING HIGH PERFORMANCE OPTICAL STORAGE, COLOR PRINTING, COLOR REPROGRAPHICS. VISUAL DISPLAYS, HIGH TEMPERATURE AIRCRAFT ENGINE SENSORS.