SBIR/STTR Research Award
10 MICRON INFRARED PHOTOTRANSISTOR
Award amount
$49,575Program and phase
SBIR · Phase IAward year
1991Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- Northeast Semiconductor Inc
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
A NEW PHOTODETECTOR FOR 10 UM WAVELENGTHS IS PROPOSED WHICH CONSISTS OF GAAS/ALGAAS QUANTUM WELLS INCORPORATED INTO A PNP ALGAAS PHOTOTRANSISTOR. BY APPROPRIATE ENGINEERING OF THE EPITAXIAL STRUCTURE, OPTICAL GAINS OF \100 SHOULD BE FEASIBLE IN THE PROPOSED DETECTOR. THE DEVICE SHOULD EXHIBIT RESPONSIVITIES AND SPECIFIC DETECTIVITIES (D") WHICH ARE SUPERIOR TO THOSE OF HGCDTE PHOTOVOLTAIC DETECTORS. THIS PHASE I PROJECT WILL INCLUDE DEVICE MODELLING AND DESIGN, GROWTH BY MOLECULAR BEAM EPITAXY AND FABRICATION OF WORKING DEVICES, AND DEVICE CHARACTERIZATION AT 10 UM WAVELENGTHS.
Technology keywords
Not reported