Low Cost 3" 1nP Based HEMTs for Advanced Millimeter Wave Monolithic Integrated Circuit Applications

To meet the future needs for increased capabilities in military as well as commercial space communications and radar applications, the W-Band (94 Ghz) frequency spectrum utilized. A critical issue has arisen in the development of the future W-band electronic systems technology: while InP-based materials and transistors are known to be the highest performance technology for W-band small signal and low-noise applications, they have not been able to be made commercially because InP material growth is at an embryonic stage of development and established sources of large diameter InP wafers are not yet available. Furthermore in power applications InP-based devices and circuits are limited by some key materials deficiencies. In particular, the "Kink effect", incomplete HFET pinch off at high drain voltages and low HFET breakdown. We plan to develop a technology for growing high IiiAs mole fraction InGaAs quantum well channel heterostructure field effect transistors (HFETS) with InAlAs barriers on 3" InP substrates for MMW devices and monolithic format integrated circuits. Structured layers- InGaAs channels, InAlAs barriers, will be grown lattice matched to or psuedomorphically on InP substrates, by engineering the lattice constant to that of InP (5.87A). Anticipated Benefits/Potential Applications - Using this approach, TLC Precision Wafer Technology will provide a steady source of material for the fabrication of MMIC's for the future W-band electronic systems on 3" InP substrates instead of 2" InP substrates.