SBIR Phase I: Inorganic Electron Beam Resist for High Throughput Nanolithography

This Small Business Innovation Research Phase I project will assess the technical feasibility of developing a robust, high-speed inorganic electron-beam resist platform that will enable the manufacture of electronic devices with feature sizes < 30 nm. The requirements of high speed, low line-width roughness, sufficient etch resistance are extreme for patterning devices at these feature sizes. Success in the project will have a considerable impact on continued progress along the ITRS semiconductor roadmap, which supports several multibillion dollar industries. New levels of device performance will be enabled, providing broad societal impacts through the introduction of advanced electronics, while enhancing prospects for domestic employment in semiconductor manufacturing. The broader scientific and engineering research communities will benefit from new techniques to build novel devices at the extreme end of the nanoscale. This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).