SBIR/STTR Research Award
FABRICATION OF INSB INFRARED ARRAYS BY MOLECULAR BEAM EPITAXY
Award amount
$49,988Program and phase
SBIR · Phase IAward year
1990Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- Electro-optek Corp
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
A PROPOSAL IS MADE TO DEVELOP HIGH-PERFORMANCE INSB DETECTORARRAYS BY MOLECULAR BEAM EPITAXY (MBE) ON GAAS. THIS EFFORTWILL FIRST DEVELOP TWO STRAINED SUPERLATTICES (SSL) IN TANDEM FOR A NEAR-PERFECT LATTICE MATCH BETWEEN THE INSB AND GAAS, AND THEN FABRICATE THE P-N JUNCTIONS FOR THE 3-5 MICRON SPECTRAL REGION. THE SUPERLATTICE BUFFER WILL SERVE TO BLOCK MISFIT DISLOCATIONS FROM PROPAGATING INTO THE INSB. THE EPITAXY OF THE N-TYPE AND P-TYPE EPILAYERS WILL BE MADE IN TANDEM BY IN-SITU DOPING TO FORM THE P-N JUNCTIONDETECTORS.
Technology keywords
Not reported