SINGLE CRYSTAL SILICON CARBIDE ON SILICON SUBSTRATES

SILICON CARBIDE HAS LONG RECEIVED INTEREST AS A CANDIDATE FOR HIGH TEMPERATURE, RADIATION TOLERANT SEMICONDUCTOR DEVICES. TRANSISTORS AND OPTOELECTRONIC COMPONENTS HAVE BEEN SUCCESSFULLY FABRICATED, DEMONSTRATING THE POTENTIAL OFTHE MATERIAL. A BARRIER TO THE WIDESPREAD USE OF THIS PROMISING MATERIAL HAS BEEN THE PROBLEM OF FABRICATING GOOD QUALITY SINGLE CRYSTAL FILMS. PREVIOUS RESEARCH USING CHEMICAL VAPOR DEPOSITION METHODS HAVE NOT BEEN SUCCESSFUL IN ELIMINATING MAJOR DEFECTS ON INEXPENSIVE SILICON SUBSTRATES. A NEW METHOD OF FABRICATION IS DESCRIBED WHICH IS BASED ON THE TECHNIQUE OF ION BEAM SYTHESIS. NOVEL TREATMENTS ARE PROPOSED IN ORDER TO PROVIDE SINGLE CRYSTAL, EPITAXIAL GROWTH ON A SILICON SUBSTRATE.