Advanced Broadband Signal Processing Algorithms for Detection and Classification of Targets in Highly Cluttered Sonobuoy Data

Not Available Interlayer dielectrics with low dielectric constants (k<3) will be needed in advanced integrated circuits to reduce crosstalk and increase signal propagation speed. Current interlayer dielectric (SiO2) does not have the desired low-k properties. As a result, a broad range of new spin coatable polymer dielectrics have been developed recently. However, these materials are prone to reliability and defectivity problems stemming from the deposition process. This has led IC manufacturers to search for low-k polymer dielectrics which can be applied by chemical vapor deposition (CVD). In Phase I, we will demonstrate a novel, cost effective syntheses for incorporating fluorine into parylenes which can be deposited by CVD methods to form low-k interlayer dielectrics. The procedure uses direct modification of relatively inexpensive and commercially available parylenes as the basis for the preparation, avoiding the typically low yielding multi-step synthesis. High thermal stability is needed for new low k material to withstand IC processing. At this time, the isothermal TGA at 1% weight loss and outgassing temperature are used to determine the usefulness of new materials. We will demonstrate the impact of thermal stress on two important physical properties for our low k materials; dielectric constant and thermal stability.