110 GHZ ON-WAFER MEASUREMENTS AND ELEMENT MODELING

ON-WAFER MICROWAVE PROBE MEASUREMENTS HAVE DEMONSTRATED THEIR UNIQUE PERFORMANCE AND PRODUCTIVITY GAINS IN SEMICONDUCTOR RESEARCH, DEVELOPMENT AND PRODUCTION ACTIVITIES. HOWEVER, DEVICE PERFORMANCE CONTINUES TO OUTPACE OUR ABILITY TO MEASURE AT THE WAFER LEVEL. AS PROBE PERFORMANCE CONTINUES INTO MILLIMETER WAVELENGTHS, THE MEASUREMENT CHALLENGE INCREASES. FORMERLY NEGLIGIBLE PROBE CONNECTION PARASITICS GROW IN MAGNITUDE WHILE THE DUT GEOMETRY AND PARASITICS TYPICALLY SHRINK. THIS PROPOSAL ADDRESSES ON-WAFER MILLIMETER-WAVE MEASUREMENT ISSUES TO 110 GHZ IN THE AREAS OF CALIBRATION STANDARD ELEMENTS AND METHODS, FET PATTERNS, S-PARAMETER MEASUREMENT TECHNIQUES AND NOISE PARAMETER MEASUREMENTS. ANTICIPATED BENEFITS/POTENTIAL COMMERCIAL APPLICATIONS - AVAILABILITY OF ON-WAFER SEMICONDUCTOR MEASUREMENT CAPABILITY TO 110 GHZ. KEY WORDS - WAFER, MILLIMETER, PROBE, FET, NOISE, CALIBRATION, S-PARAMETERS, MEASUREMENT.