SBIR/STTR Research Award

Novel, Thick SiC Epitaxial Growth for Next-Generation Power Devices

Award identifier ebdf72cfb348728089f0d66b3fe9138d018250b1fc75bdf5424eec0216f5bc5fAwarding agency Department of Defense · Air Force

Award amount

$99,401

Program and phase

SBIR · Phase I

Award year

1998

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
INTRINSIC SEMICONDUCTOR CORP.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Sterling Semiconductor will develop technology for superthick 4H-SiC epitaxial layers of up to 300 microns thick. Epitaxial layers of SiC of this thickness will satisfy needs in motor drive, transportation, power distribution and power transmission markets that cannot be satisfied with silicon. These layers will be formed with high purity, high minority carrier lifetime, and will be useful for blocking voltages of up to 30kV.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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