SBIR/STTR Research Award

Long-Wavelength Oxide Vertical-Cavity Surface Emitting Lasers

Award identifier 572f317768e62d062fdf4ea453e8421bb733e6159680b2b485e838b103771a9bAwarding agency Department of Defense · Missile Defense Agency

Award amount

$750,000

Program and phase

SBIR · Phase II

Award year

1997

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
PICOLIGHT, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

This proposal describes an experimental program to determine the feasibility of fabricating long-wavelength (>1.3um) oxide vertical-cavity surface-emitting lasers (VCSELs). It addresses the two most inhibiting difficulties in fabricating practical long-wavelength VCSELs: 1) Use of oxidized layers in the bottom mirror results in a mirror thickness reduction from ~7um to <2um. 2) Implementation of a current aperture defined by oxidation should minimize required current densities as in shorter-wavelength oxide VCSELs. Phase I targets 1.3-1.55 um wavelengths, although the techniques are also valid for longer wavelengths. Use of InP substrates allows growth of standard 1.3-1.55 um laser active regions. Central to the program is investigation of "wet oxidation" of AlAsSb layers lattice matched to InP: required temperatures, oxidation rates, possible changes in material volume, robustness, effect on active material, etc. Phase I will fabricate simple test structures with a wide range of parameters, test them, and determine whether the process can produce practical long-wavelength VCSELs. An optional task is to fabricate and characterize actual VCSELs using the proposed process.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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