SBIR/STTR Research Award

ULTRA-HIGH BRIGHTNESS LASER DIODE ARRAYS FOR 10 W - 300 W CW APPLICATIONS

Award identifier e1e27505dd0e0b386ec30a3593ae8dce8d5f44b78b5393e189f0d93b444cdf3eAwarding agency Department of Defense · Air Force

Award amount

$379,219

Program and phase

SBIR · Phase II

Award year

1995

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
SDL Inc
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

SDL proposes to develop a new class of high power, ultra-high brightness semiconductor diode laser arrays based on a unique large-aperture single-mode laser. The new array architecture will increase the brightness available from high power semiconductor arrays by two orders of magnitude. The array is composed of elements each emitting single frequency, diffraction-limited output to 1 W cw from a single aperture. Brightness exceeding 10 MW/cm2Sr can be obtained from linear array modules using brightness-conserving microoptics and optical fibers. These compact modules can be combined into 10 W to 300 W cw systems, configured to maintain high brightness. This revolutionary laser array design is applicable to all semiconductor laser materials emitting from visible to mid-infrared wavelengths.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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