High Temperature Electronics for Vehicle Integration

All future combustion and electric powered automobiles will be equipped with sensors directly interfaced with control electronics. The control and power electronics for combustion engines will have to cope with high temperatures and adverse environments. Hybrid and electric vehicles require new device technology to handle the high power in their distribution and control systems. High efficiency, low weight and elevated temperature operation electronics will be critical. Because of its unique physical and electronic properties, silicon carbide is an ideal semiconductor for both high temperature and high power applications. Yet despite SiC's promise, little attention has been paid to the optimization of device designs for high power application. We propose to address a key power device design requirement, minimization of parasitic effects which limit performance, and thereby demonstrate the superiority of SiC devices. ATM's expertise in high purity SiC substrates and epitaxial growth will be coupled with novel, specifically optimized device topology and epitaxial structure. In Phase I, we will fabricate a two terminal prototype SiC Schottky power rectifier. In Phase II, these results will be extended to a three terminal device, the power MOSFET. In Phase III, devices, integrated circuits, and sensors, specifically for the automotive industry, will be manufactured. Anticipated Benefits: SiC electronics will enable devices providing new functionality that cannot be matched by Si or GaAs devices. Advantages will include high temperature and power operation and redued volume, weight and parts count. Applications include vehicle technology, avionics, motor controls, power control, high frequency power generation and blue LEDs.