DEVELOPMENT OF HIGH-IN-CONTENT PSEUDOMORPHIC HEMTS FOR HIGH PERFORMANCE RF COMMUNICATIONS DEVICES

THERE EXISTS AN ONGOING DEMAND FOR HIGH-PERFORMANCE TRANSISTORS IN THE FIELD OF SATELLITE COMMUNICATIONS. THIS PROPOSAL FOCUSES ON HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) USEFUL IN A VARIETY OF MICROWAVE APPLICATIONS; SPECIFICALLY, SPIRE PROPOSES TO DEVELOP THE GROWTH OF HIGH INDIUM-CONTENT PSEUDOMORPHIC HEMTS BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD). BY INCREASING THE AMOUNT OF INDIUM PRESENT IN THE TWO-DIMENSIONAL ELECTRON GAS (2DEG) CHANNEL, SIGNIFICANT GAINS MAY BE REALIZED IN TERMS OF ELECTRON PEAK VELOCITY, ELECTRON MOBILITY, REDUCTION OF TRAP-RELATED GENERATION/RECOMBINATION NOISE, AND LOWER OUTPUT CONDUCTANCE. THESE ACCOMPLISHMENTS WILL RESULT ULTIMATELY IN A SUPERIOR HIGH-SPEED DEVICE, WHICH WILL BENEFIT BOTH THE GOVERNMENT AND THE PRIVATE SECTOR.