Comercial Photorefractive device Using Non - Stoichicuetric III - V Semiconductors

Non-stoichiometric (NS) IE-V materials offer a unique oppomnity to technoloEies such as optoelectronic based photo refractive devices that require both sho. carrier diMusion length and enhanced electrooptic propenies. With the ability to process 2D data at rates two orders of magnitude higher than the capability of digital electroaics, these devices will facilitate commercializatioa of eaormously marketable technologies such as ultra high speed obj ect recognition, defect and pa M recognition in assembly lines and supermarkets, etc. CoreTek Inc, proposes a novel conuuercial photorefractive device that takes advantage of the unique prope.ies of NS-GaAlAs. With difimcdon efficiency > 8%, a response time of 1 ^s and a spatial definition of 3 ,,m, these devices are ideal for the practical applications noted. In Phase I, our team of expeM, D^s F' Tayebati of CoreTe% D. D. Nolte of Purdue Uni^ersity and W. D. Goodhue of U. Mass. Lowell, will test the feasibility of the approach by fabricating and testing sample devices. In Phase II, CoreTek will optimize these devices for specific applicatioH and make them conimercially available as of^the-shelf products. ' ', The proposed program engineers a novel thin film semiconductor based photorefmctive