SBIR/STTR Research Award

Single AlGaInP Semiconductor Laser Pumped Widely Tunable Mid-IR Generator

Award identifier de8b20e7dfd443ec57c8c76cbef6673ab9f4e6aee55cbd021cb4938a368c662eAwarding agency Department of Defense · Air Force

Award amount

$99,484

Program and phase

SBIR · Phase I

Award year

1996

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
NZ APPLIED TECHNOLOGIES CORP.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Mid-infrared laser sources in the range of 2-5 mm have many important applications such as eye-safe detection, trace-gas monitoring, and wind speed/wind shear measurements. Traditional techniques by optical parametric oscillation (OPO) and dual-laser frequency difference generation require (DFG) high power pump sources and very complex systems. Fabrication of these systems is costly. In this program we propose to develop a single diode-laser pumped mid-IR laser system. The near-IR intermediate output pumped by the 670-nm A1GaInP diode laser mixes with the residual diode laser beam in a quasi-phase matched (QPM) KTA nonlinear crystal and mid-IR signals is generated by intra-cavity QPM-DFG. The mid-IR output can be tuned over a wide range by merely tuning the near-IR; no temperature or angle tuning of the KTA crystal is needed. The tunable mid-IR laser system is all-solid-state, simple, low cost, and highly efficient. Power generation capability are estimated to be hundreds of milliwatt power.| Benefits: Success in this Phase I program will identify the promising concept and provide a viable manufacturing route for practical compact mid-IR laser sources.|

Technology keywords

Not reported

Agency intelligence

Department of Defense

Back to SBIR/STTR Research Awards

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