SBIR/STTR Research Award

Large Area, High Dynamic Range, Sold State Photomultiplier Array for Cherenkov Calorimetry

Award identifier 946835af2a1a8c665d7ec544f993f8bfa4de2570952bc84632a16a31d0a4b352Awarding agency Department of Energy

Award amount

$650,000

Program and phase

SBIR · Phase II

Award year

2008

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
VOXTEL, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
N2KECNUUMBF4
Solicitation number
DE-PS02-06ER06-30
Topic code
34

Research abstract

Existing solid state detectors, such as charge coupled device (CCD) and complimentary metal oxide silicon (CMOS) imagers do not have adequate ultraviolet (UV) sensitivity for Cherenkov radiation detection. Therefore, a new type of UV-optimized, high-gain, low-noise, solid state avalanche photodiode (APD) is needed for low-level light detection of Cherenkov radiation. In recent years, silicon, CMOS-compatible solid state photomultipliers (SiPM) detectors have been shown to be capable of registering low scintillating light, and consequently intensive studies have been carried out to qualify SiPM-like APDs as possible photosensors for scintillation detectors. The results of these studies have revealed encouraging performance characteristics. However, due to the SiPM circuit¿s architecture, the detector¿s sensitivity peaks in the `green¿ part of the optical spectrum and is not very sensitive to the UV. This project will develop a large area, pixilated SiPM detector architecture that is optimized for illumination from the backside, where, unencumbered by the individual detector¿s circuitry, high responsivity can be achieved over the entire spectral range of Cherenkov radiation. In Phase I, single photon sensitive APDs and two SiPM detector designs where characterized over a wide range of operating conditions. Based on the identification and characterization of those device performance attributes critical for Cherenkov detection applications, the design of a large area, tiled, silicon-on-insulator (SOI) CMOS SiPM focal plane array (FPA) was developed and on-chip readout electronics circuits designed. During Phase II, the back-illuminated SOI CMOS SiPM arrays will be fabricated, optimized, integrated and their performance evaluated. Commercial Applications and other Benefits as described by the awardee: Improved SiPM devices will support future experiments in nuclear physics, high-energy physics, and astroparticle physics, DNA-sequencing, fluorescence and luminescence detection, positron emission tomography and single photon emission computed tomography.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

235 SBIR/STTR records share this UEI (2000–2021). Reported award amounts total $86,180,717. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration, Department of Commerce, Department of Homeland Security, Environmental Protection Agency

Agency intelligence

Department of Energy

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