Enhanced A/J Performance GPS FRPA Antenna and Electronics

Not Available The objective of this proposed SBIR is to develop new commercially affordable high power, high efficient microwave power amplifiers based on GaN heterostructure field effect transistors (HFET). Compact, lightweight and efficient microwave power amplifiers are needed for BMDO mobile radar systems application. GaN HFET has been demonstrated under the sponsorship of a BMDO program to have excellent micorwave characterization for X band applications ¿ with much improved power density and thermal characteristics. This technological achievement in GaN based HFET suggests a potential major advance for high efficient, high power microwave amplifiers for application in lightweight phase array radars and mobile communications systems. In Phase I, we will study the design and assess the feasibility of prototyping the amplifier and the potential power performance for BMDO¿s applications as well as for other defense and civilian sectors. Our plans also include the follow-on Phase II program in forming a joint business venture with a Los Angeles based company for prototype demonstration. Likewise, we have in plan to work on the manufacture of GaN HEMT¿s with a major RF semiconductor manufacturer