SBIR/STTR Research Award

Multilayer In-Rush Current Limiters

Award identifier 232405b31a1a080ed9ceac4304691ef6232962f6d55aba3a7b8563ef8775bb33Awarding agency Department of Defense · Missile Defense Agency

Award amount

$64,966

Program and phase

SBIR · Phase I

Award year

2001

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Nanomaterials Research LLC
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

This Phase 1 SBIR project seeks to demonstrate the feasibility of producing multilayered in-rush current limiting devices based on materials that exhibit a negative temperature coefficient of resistance (i.e., NTC thermistors). As microelectronic systemscontinue to proliferate, the need to protect microprocessors from damage due to over-voltage and over-current conditions has created a rapidly growing market for circuit protection devices. At this time, most of the devices used in these applications areleaded ceramic disks. These components are often the largest component on the circuit boards and in many cases require the circuit to be fabricated using a combination of automated (e.g., pick-and-place) and manual operations.The proposed research aims to demonstrate a new chip-style, in-rush limiter with superior characteristics to state-of-the-art devices, transitioning this technology into products that are compatible with modern circuit manufacturing technologies. Theproposed work builds on the company's extensive experience in the design and fabrication of novel circuit protection devices using advances in materials science. If successful, these components will complement our portfolio of multilayered circuitprotection devices.Circuit protection devices are needed in both military and commercial applications to defend microprocessors and other electronic components from in-rush currents. The proposed work will demonstrate the feasibility of producing a multilayer device withsuperior performance characteristics as compared to the currently available leaded devices. It is anticipated that this approach to device design will offer (1) improved performance in a multilayer package, (2) reduced component size, (3) tailorable baseresistance values through multilayer designs, and (4) compatibility with pick-and-place (e.g., tape-and-reel) manufacturing of electronics.Examples of military and civilian application of the proposed technology include use in communication satellites, antennas, computers, navigation and weapon control systems, and voice encryption systems.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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