Novel SiC MOSFET Technology

The ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meet such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophisticated control electronics increase costs and decrease the efficiency of power conversion and control. By silicon carbide semiconductors will dramatically decrease the cost and improve the efficiency of power control circuits. Critical to the implementation of SiC power devices is the ability to control the oxide/semiconductor interface. In Phase I, we will explore the details of the SiC SiO(sub 2) interface and demonstrate a novel oxide deposition technology to enable the design and fabrication of high power, high temperature SiC MOSFETs in Phase II. In Phase III, commercial power MOSFETs as well as analog IC's will be targeted for manufacture.