SBIR/STTR Research Award

ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES

Award identifier da4a7cc370d89b4ee8b192fb85037d2f2bb160fe5843881d20c87e54c857cb33Awarding agency Department of Defense · Missile Defense Agency

Award amount

$400,000

Program and phase

SBIR · Phase II

Award year

1993

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Electron Transfer Tech
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

PHOSPHINE (PH3) IS A GAS NECESSARY FOR MAKING COMPOUND SEMICONDUCTORS SUCH AS INP, INAS(1-X)PX, GAP, AND GAAS(1-X)PX AS WELL AS A DOPANT SOURCE FOR SILICON. IT IS A VERY TOXIC GAS WITH A TLV OF 0.3 PPM. NEW REGULATIONS MAKE THE TRANSPORT, STORAGE, AND HANDLING OF COMPRESSED GAS CYLINDERS OF PHOSPHINE INCREASINGLY DIFFICULT. TO AVOID THESE PROBLEMS, WE ARE DEVELOPING A COMPACT POINT OF USE PHOSPHINE GENERATOR. THE GENERATOR WILL PRODUCE SEMICONDUCTOR GRADE PHOSPHINE ON DEMAND AT THE SEMICONDUCTOR FABRICATION FACILITY. THIS DEVELOPMENT WILL PROVIDE A MUCH SAFER SOURCE OF PHOSPHINE.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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