SBIR/STTR Research Award
ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES
Award amount
$400,000Program and phase
SBIR · Phase IIAward year
1993Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Electron Transfer Tech
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
PHOSPHINE (PH3) IS A GAS NECESSARY FOR MAKING COMPOUND SEMICONDUCTORS SUCH AS INP, INAS(1-X)PX, GAP, AND GAAS(1-X)PX AS WELL AS A DOPANT SOURCE FOR SILICON. IT IS A VERY TOXIC GAS WITH A TLV OF 0.3 PPM. NEW REGULATIONS MAKE THE TRANSPORT, STORAGE, AND HANDLING OF COMPRESSED GAS CYLINDERS OF PHOSPHINE INCREASINGLY DIFFICULT. TO AVOID THESE PROBLEMS, WE ARE DEVELOPING A COMPACT POINT OF USE PHOSPHINE GENERATOR. THE GENERATOR WILL PRODUCE SEMICONDUCTOR GRADE PHOSPHINE ON DEMAND AT THE SEMICONDUCTOR FABRICATION FACILITY. THIS DEVELOPMENT WILL PROVIDE A MUCH SAFER SOURCE OF PHOSPHINE.
Technology keywords
Not reported