Novel Method for Growth of p/n Type Expitaxial GaN for High Temperature Electronic Device Applications

With the development of the first II/Vi (ZnS/ZnSe) blue lasers, wide bandgap materials have reached a new level of technological importance. For a long time, device development was hindered by inadequate materials technology. However, the epitaxial growth technologies originally used for GaAs/A1GaAs materials, such as MOCVD and MBE, have now matured. Their application to the case of wide bandgap semiconductors promises solutions to many of the decades old problems. Historically, it has been impossible to produce wide gap III/V or II/VI materials with significant p-type conductivity. The proposed program utilizes a unique approach, utilizing Plasma Enhanced Chemical Vapor Deposition, to enhance the dopant incorporation efficiency of p-type impurities. This will allow the fabrication of blue LEDs with increased output using an approach which is better suited to mass production than the Low-Energy Electron Beam Irradiation method pioneered in Japan.