Stable Silicon Photodiode Arrays for the Ultraviolet

Silicon p-n junction photodiodes (AXUV diodes) with stable, theoretically predictable quantum efficiencies in the vacuum ultraviolet, extreme ultraviolet and the soft x-ray (XUV) spectral region were developed by us recently leading to their use for establishment of an independent responsivity scale for the soft X-ray region. In this work, we intend to optimize developed AXUV diode processes to fabricate near ultraviolet (UV, 200-400 nm) photodiodes. During Phase I, fabrication of a discrete, 1 cm^2 area photodiode with stable, 100% internal quantum efficiency in 350-600 nm is proposed. We believe that the fabricated diode will be superior in all respect compared with the secondary standards used by NIST presently. Demonstration of successful fabrication of a stable device will lay a foundation for fabrication of one and two dimensional arrays during Phase II. Fabrication of stable 1024-element self-scanned photodiode arrays and CCDs will be undertaken during the Phase II research.