SBIR/STTR Research Award

Silicon Carbide Bipolar Junction Transisotr for RF Applications

Award identifier 02e24e79a8364402d57dcaae00ead9f2aa2ed6a63aba0dddec9fcfe0e77cdf17Awarding agency Department of Defense · Office of the Secretary of Defense

Award amount

$100,000

Program and phase

SBIR · Phase I

Award year

1999

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Award details

Awarding agency
Department of Defense
Branch
Office of the Secretary of Defense
Recipient company
EXTREME DEVICES INCOPORATED
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Not Available Fast tuning microwave synthesizer systems are required by the DoD for the demodulation of waveforms encoded by spread spectrum techniques. These systems are required for signal jamming, jamming countermeasures, secure communications and low phase noise sources for rapidly tuned radar. Our novel approach to these requirements involves optical heterodyne between two diode laser-pumped, electro-optically tuned, single frequency microlasers operating at 1.55 ¿m. In such a device, the output frequency is tuned simply by applying a voltage to the laser Phase noise control is facilitated as well as phase locking. This is in contrast to slower frequency control techniques that use piezoelectric or temperature control. The anticipated performance of monolithic devices yields an optical source with extremely low phase noise, making the ideal for microwave synthesis. Microlaser technology combines this potential with compactness and low cost and represents a substantial improvement over current state-of-the-art non-planar lasers. The Phase program includes RF signal generation by heterodyne between tow narrow linewidth lasers.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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