SBIR/STTR Research Award
Silicon Carbide Bipolar Junction Transisotr for RF Applications
Award amount
$100,000Program and phase
SBIR · Phase IAward year
1999Award details
- Awarding agency
- Department of Defense
- Branch
- Office of the Secretary of Defense
- Recipient company
- EXTREME DEVICES INCOPORATED
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
Not Available Fast tuning microwave synthesizer systems are required by the DoD for the demodulation of waveforms encoded by spread spectrum techniques. These systems are required for signal jamming, jamming countermeasures, secure communications and low phase noise sources for rapidly tuned radar. Our novel approach to these requirements involves optical heterodyne between two diode laser-pumped, electro-optically tuned, single frequency microlasers operating at 1.55 ¿m. In such a device, the output frequency is tuned simply by applying a voltage to the laser Phase noise control is facilitated as well as phase locking. This is in contrast to slower frequency control techniques that use piezoelectric or temperature control. The anticipated performance of monolithic devices yields an optical source with extremely low phase noise, making the ideal for microwave synthesis. Microlaser technology combines this potential with compactness and low cost and represents a substantial improvement over current state-of-the-art non-planar lasers. The Phase program includes RF signal generation by heterodyne between tow narrow linewidth lasers.
Technology keywords
Not reported