DEVELOPMENT OF HIGH TEMPERATURE 4H-SiC POWER ACCUFET

4H-silicon carbide power devices are expected to have 3x higher current densities and 200x lower on-resistance, while still operating up to 350 degree C. This is because of an order of magnitude higher breakdown electric field and a 2-3x higher thermal conductivity of 4H-SiC as compared to Si. Recent advances in 4H-SiC crystal quality, low doped epitaxial uniformity, dopant ion implantation, reactive ion etching and high voltage edge termination at Cree presents tremendous opportunity to fabricate high power 4H-siC ACCUFET devices. In this Phase I research, 1000 V, 1 Amp ACCUFETs capable of operating up to 350 degree C. The experimental results from the fabricated devices will then be compared with those obtained in the simulation design and further optimization will be carried out in Phase II of the program. A simulation study of various structures possible with an accumulation mode FET will also be conducted.