SBIR/STTR Research Award

60 GHZ IMPATT DIODES

Award identifier ab372989c60ba9182722cb67d13d2ee4716ffc7b34f7204c3f14e83b9c30c65dAwarding agency Department of Defense · Air Force

Award amount

$49,967

Program and phase

SBIR · Phase I

Award year

1988

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
Myk Technology Inc
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

DOUBLE DRIFT 60 GHZ GAAS IMPATT DIODES ARE PROPOSED FOR SPACE SYSTEM APPLICATIONS. HIGH EFFICIENCY IMPATT STRUCTURES PERFORMANCE SUCH AS GAAS "READ" IS LIMITED BY MATERIAL GROWTH TECHNOLOGY TO FABRICATE VERY THIN N AND P LAYERS, AND BY HEATSINK TECHNIQUE. MOCVD IS PROPOSED FOR THE DIODE DOPING PROFILE GROWTH AND A DOUBLE HEATSKIN IS PROPOSED FOR HEAT DISSIPATION. TRADE-OFFS OF DIFFERENT IMPATT STRUCTURE WILL BE CONDUCTED FOR APPLICATIONS MEETING SPACE SYSTEM REQUIREMENTS.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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