BURIED SILICIDE INTERCONNECTIONS WITH BONDED WAFERS

COMPLEX MONOLITHIC INTEGRATED CIRCUITS ARE INCREASINGLY LIMITED BY THE NEEDS OF DEVICE INTERCONNECTIONS. EXISTING MATERIALS TAKE UP VALUABLE REAL ESTATE ON THE DIE, LIMIT CURRENT, AND ARE SUBJECT TO PARASITIC CAPACITANCES. THE USE OF MULTILEVEL AND 3D STRUCTURES HAS BEEN SUGGETED IN ORDER TO AVOID SOME OF THESE PROBLEMS. FORMATION OF CONDUCTORS BY ION IMPLANTATION SHOWS PROMISE FOR PROVIDING SUCH CONNECTORS IF CERTAIN PRACTICAL PROBLEMS CAN BE OVERCOME. NOVEL IMPLEMENTATION TECHNIQUES ARE PROPOSED WHICH WOULD DEMONSTRATE THE PRACTICALITY OF COMPLEX INTERCONNECTION PATTERNS.