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Not Available The use of high-temperature electronic systems using new semiconductor materials such as Silicon Carbide (SiC) or Gallium Nitride (GaN) offers great promise for the expansion of high-efficiency high-power applications. The high temperature operation of these devices can greatly reduce the size and weight of a power system by reducing converter heatsinking requirements. In addition, the availability of high temperature electronics allows for the placement of electronic circuitry closer to the point of load for many applications, which can result in improved performance and smaller size. Such high temperature environments, however, require new tools for the design the accompanying magnetic devices and other passive components. VPT proposes to develop magnetic device characterization procedures and device design tools that accommodate a variety of electrical and thermal environments. These tools and guidelines will combine empirical material data with analytical and numerical computations. The unique aspect of this work is the comprehensive inclusion of environmental factors and device thermal management techniques in the overall design process. The proposed design approach represents an expansion of existing magnetic device design methods and will aid in the evaluation and development of new materials that can meet the needs of high temperature, high power applications.