An Automatic Beam-Based System for Analyzing Accelerator Misalignment Problems

Not Available It is herein proposed to grow SiC epitaxial layers via hot-wall chemical vapor deposition (CVD) using a rotation system to greatly improve thickness and doping uniformities. This will improve device performance and yield for all application areas. The advantage of highly uniform epitaxial SiC will be greatest for microwave MESFETs and high power devices. Epitaxy for these two types of devices will be the focus of this program. Recent attempts to improve uniformity have been encouraging in hot wall systems without rotation and cold wall systems with rotation, however, still fall short of what is required for device production. At the end of Phase I, we should be able to produce SiC epitaxial layers up to 10 um with uniformity of <5% in thickness and <20% in doping. An additional benefit will be the ability to deposit on three wafers per reactor run. At the end of Phase II, we should be able to produce layers with uniformity of <1% in thickness and <7% in doping with a capacity of six wafers per deposition cycle. Wafers of both Schottky diodes and MESFET devices will be mapped to verify the uniformity achieved.