Optical Imaging of Semiconductor Device Properties

This proposal describes a plan to develop techniques for parallel sampling of the internal parameters of semiconductor devices using optical imaging methods. These techniques were created initially to study high-power photoconductive switches and have demonstrated the ability to measure the internal electric fields, carrier densities and temperatures in these devices. Application of these techniques is not limited to photoconductive switches, however, and can provide a powerful tool for the research and development phase of semiconductor device development, as well as on-line inspection. Currently, the design, manufacture, and troubleshooting of modern, high-performance semiconductor devices and integrated circuits relies almost entirely upon electrical measurements made to the device's external electrical contacts. Internal characteristics must be inferred from these limited measurements. The use of optical imaging techniques allows direct measurement of these critical parameters over the entire circuit. Optometrix has assembled the team of scientists and engineers responsible for the initial efforts in this area in order to bring these methods to the general semiconductor industry. We believe that this technology opportunity represents a significant breakthrough in semiconductor testing and diagnostic techniques.