High Power, Tunable Terahertz Sources Based on Intersubband Transitions in SiGe Quantum Wells

A Phase I program is proposed to develop terahertz tunable sources based in intersubband transitions in SiGe quantum wells. By utilizing silicon based materials, as opposed to the more commonly used Group III-V semiconductors, these sources will becompatible with low cost, integrated circuit processing techniques. The overall goal of this STTR Project is to open up the terahertz frequency range for both defense and commercial applications by developing a versatile swept frequency source.Thesuccessful development of miniature, solid state tunabale terahertz sources, with their high output power and wide tunability, will open opportunities for new and exciting defense and commercial applications in high data rate communications and highresloution imaging sytems.