Novel heterojunction diodes for High Power Electronics

The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p type. GaN is generally grown on insulating sapphire substrates, which have poor thermal conductivity.Therefore, the sapphire substrates limit efficient thermal management in high power GaN-based devices. By growing GaN on SiC one can make heterojunctions with excellent thermal properties. Should the proposed research effort be funded, it will deliver anovel heterojunction devices suitable for a range of high-temperature, high-power applications. This device will out perform current state-of-the-art devices and will be manufactured reliably and inexpensively using standard semiconductor manufacturingtechniques. With Viatronix's ability to grow superior heterojunction devices we believe there are numerous commercial and military markets for this technology.