FOR DNA EFFECTS SIMULATION USING LASS SWITCHES

WE PROPOSE A NOVEL MICROWAVE GENERATION SCHEME UTILIZING LIGHT ACTIVATED SEMICONDUCTOR SWITCHES (LASS). THE PROPRIETARY CONCEPT DIFFERS FROM ALL OTHER LASS BASED GENERATION SCHEMES IN THAT IT ALLOWSTHE SEMICONDUCTOR TO OPERATE AT ITS MAXIMUM CURRENT DENSITY AND ELECTRIC FIELD CONCURRENTLY THEREBY PROVIDING FOR ONE TO TWO ORDERS HIGHER MICROWAVE POWERS THAN OTHER APPROACHES. SPECIFICALLY 10 TO THE 8TH POWER W PEAK AND 10 TO THE 7TH POWER W AVERAGE POWERS ARE EXPECTED AT 10 TO THE 8TH POWER W/CM SQ FROM AN INDIVIDUAL SOURCE OCCUPYING 100 CM SQ PRINTED CIRCUIT BOARD WITH ELECTRICAL TO MICROWAVE CONVERSION EFFICIENCY IN EXCESS OF 70% (NOT INCLUDING LASER EFFICIENCY). THESE RESULTS ARE BASED ON EXPERIMENTS PERFORMED BY TWO ECR STAFF MEMBERS (LOG AND ZUCKER) WHILE AT LLL WHERE 5 KA, 1 KV PULSES WERE SWITCHED IN 150 PICOSECONDS. COHERENT POWER SCALING TO THE MULTI-GW LEVEL IS STRAIGHTFORWARD DUE TO THE ABSOLUTE LASER TIMING. SIMULTANEOUSLY SINGLE CYCLE RISE TIME AND TUNED BANDWIDTH ARE AVAILABLE BY SELECTING THE PROPER LASER TIMING SEQUENCE.