Development of an Isotropic Etching Method of Surface Preparation of SiC

"This Phase I SBIR program is aimed at demonstrating the principle of an approach for the surface preparation of SiC wafers comparable or superior to chemo-mechanical polishing. In the Phase I program, surface preparation of 4H-SiC wafers 50 mm (2 inches)in diameter will be demonstrated. Also in Phase I, the prepared (treated) surface of the SiC wafer will be characterized for average surface roughness (Ra), mean roughness depth Rz, and damaged layer removal to confirm the viability of the developedprocess. In Phase II, the Phase I demonstrated process will be implemented to demonstrate a commercially feaasible process for preparing multiple wafers that are ready for epitaxial growth and device processing. The proposed approach for the surface preparation of commercial SiC wafers by the method of non-preferential etching offers the potential to completely remove the damaged layer produced by the abrasive action during wafering, lapping, and mechanicalpolishing, and thus produce epitaxy-ready surfaces. The proposed approach also offers the potential to be cost-effective and to be a commercial viable process."